Vapor growth apparatus and vapor growth method capable of growing good productivity
US5730802A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Dec 27, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor growth apparatus and a vapor growth method is capable of growing a compound semiconductor layer having an evenness and an interfacial sharpness in units of atomic layers with a good productivity. A growth chamber has a cylindrical portion and an end plate which closes an upstream end of the cylindrical portion. The end plate is provided with a cation gas material supply inlet and an anion material gas supply inlet, while an exhaust device is provided on the downstream side of the cylindrical portion. A substrate holder having a substrate support surface is provided in the cylinder portion. A gas separating member separates flow paths of material gases from each other, thereby forming on the substrate support surface a plurality of material gas supply areas to which the material gases are independently supplied. A drive device rotates the substrate holder with a substrate set on the substrate support surface thereof around the center line of the cylindrical portion. Then a cation material and an anion material gas are alternately supplied to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.