Field emitter array incorporated with metal oxide semiconductor field effect transistors and method for fabricating the same
US5731597A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 24, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Sep 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides field emitter arrays (FEAs) incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, an FEA and MOSFETs, by using common processing steps among the processes of fabricating Si-FEAs or metal FEAs and MOSFETs, wherein the method comprises steps of forming field emission tips and active regions for MOSFETs by oxidizing selected portions of a silicon nitride layer, forming a gate insulating oxide layer for the FEA and field oxide layers for MOSFETs simultaneously by the LOGOS method and connecting gate electrodes (row line) and cathode electrodes (column line) of the FEA to MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.