Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure
US5731856A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Dec 30, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a liquid crystal display includes the steps of depositing a first metal layer on a substrate, and depositing a second metal layer on the first metal layer opposite the substrate. The first and second metal layers are patterned to provide a gate electrode on a TFT area of the substrate and to provide a gate pad on a pad area of the substrate. An insulating layer is formed on the gate electrode and on the gate pad, and on the substrate, and a semiconductor layer is formed on the insulating layer opposite the gate electrode wherein the semiconductor layer includes a channel region opposite the gate electrode and first and second spaced apart source/drain regions separated by the channel region. First and second spaced apart metal source/drain electrodes are formed on the respective first and second spaced apart semiconductor source/drain regions, and a protective layer is formed on the exposed portion of the first semiconductor layer opposite the substrate, on the first and second metal source/drain electrodes opposite the substrate, and on the insulating layer opposite the gate pad. A first contact hole is formed in the protective layer exposing a portion of one …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.