Power conversion device and semiconductor module suitable for use in the device
US5731970A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.