Self-contained reprogramming nonvolatile integrated circuit memory devices and methods
US5732018A · kind A · utility
59Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Oct 29, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile integrated circuit memory devices, such as EEPROMs, use unselected shared latching sense amplifiers to latch data from memory cells which are to be reprogrammed after a page erase, and to resupply the latch data to the memory cells which are to be programmed after erase, to thereby internally reprogram the latched data into erased memory cells after page programming. Transferring circuits and methods are provided for transferring data between shared latching sense amplifiers to permit internal reprogramming. High speed and simplified reprogramming of EEPROMs is thereby provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.