Blanket oxidation for contact isolation
US5733817A · kind A · utility
0Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming isolated metal contacts during fabrication of semiconductor devices including blanket forming contact metal on a semiconductor device having a mesa structure with a first layer overlying an upper surface, a second layer overlying a lower surface and a third, substantially thinner layer overlying the sidewall therebetween. The contact metal is blanket oxidized using deep ultra violet light until the third layer is substantially completely oxidized thereby electrically isolating the first layer from the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.