Semiconductor device and manufacturing method therefor
US5734181A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Sep 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a MISFET includes: a silicon substrate (2) having a semiconductor region on a surface thereof; a source region (10a) and a drain region (10b) formed in the semiconductor region separately; a channel region formed in the semiconductor region and between the source region and the drain region; a gate electrode (6) formed on the channel region; and a region (8a) formed of Si.sub.1-x C.sub.x overlapping the source region and having a carbon concentration enough to increase an energy gap therein beyond that in the channel region. Further, the MISFET is constructed in such a way that a hetero-junction surface formed between the region formed of Si.sub.1-x C.sub.x (8a) and the other portion of the semiconductor region on the side of the channel region exists at an interface between the source region (10a) and the channel region or in the vicinity thereof, in order to realize a high speed operation, even if the device is microminiaturized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.