Multi-layer magnetic tunneling junction memory cells
US5734605A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Sep 10, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.