Semiconductor memory device and sense circuit
US5734616A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Aug 8, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static RAM includes pre-amplifiers, which are made up solely of emitter-follower transistors having their collectors supplied with the power voltage, in one-to-one correspondence to sub common data line pairs which are connected by column switches to complementary data line pairs of memory arrays. The pre-amplifier is provided with a first switch which turns on during the selected state to connect the sub common data line pair to the bases of the transistors and a second switch which turns on during the unselected state to provide the bases with a certain bias voltage lower than the readout signal voltage on the sub common data line pair. The emitter-follower transistors have their emitters connected commonly to form common emitter lines, which are connected to pairs of input terminals of main amplifiers made up of CMOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.