Plasma processing apparatus for dry etching of semiconductor wafers
US5735993A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a plasma processing apparatus having a dielectric member through which electromagnetic-waves are introduced into the reaction vessel to excite a plasma therein. A metallic resistor plate 3 is buried in the dielectric member to reduce capacitive coupling components in the plasma and to function as the electromagnetic-wave transmitting and heating member. The metallic resistor plate 3 is provided with a DC power supply 5 and a current controller 7 for feeding a controlled direct current to the metallic ressitor plate so as to elevate and control the temperature of the dielectric member 2. Sputtering of the dielectric member is prevented by the reduction of the capacitive coupling component, while deposition of etching products on the dielectric is suppressed by the controlled heating of the dielectric, thereby alleviating the problem of contaminating particle generation and increasing etching condition stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.