Transparent conductive film and method for its production, and sputtering target
US5736267A · kind A · utility
14Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1995 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Aug 16, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31667
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.