Sputtering target
US5736657A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Mar 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/913
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0.5.ltoreq..alpha.<8, 5.ltoreq..beta..ltoreq.23, 17.ltoreq..gamma..ltoreq.38, 32.ltoreq..delta..ltoreq.73, .alpha..ltoreq..beta., and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. An optical recording medium includes a recording layer containing a phase-change recording material which includes as constituent elements Ag, In, Te and Sb with the respective atomic percents of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 1.ltoreq..alpha.<6, 7.ltoreq..beta..ltoreq.20, 20.ltoreq..gamma..ltoreq.35, 35.ltoreq..delta..ltoreq.70, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase change of the recording material in the recording layer. A method of forming the above recording layer for the optical recording medium is also provided. In addition, there is provided an optical recording method using the above-mentioned phase-change…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.