Semiconductor device and method of manufacturing the same
US5736776A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1995 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Feb 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
Abstract
On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.