High frequency microelectronics package
US5736783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | May 14, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency microelectronic package suitable for high-frequency microelectronic devices includes a base which is at least partially conductive and attached to an RF substrate with a cavity formed at its center. The base may be metal or ceramic with a metal layer deposited thereon. A pattern of conductive paths for providing interconnection from the inside to the outside of the package are formed on the surface of the RF substrate. These conductive patterns are designed to have a constant impedance when uncovered, regardless of the dielectric property of the material used to cover the conductive patterns. Namely, a sealing cap or a lid, made from a variety of dielectric materials, may be attached to the RF substrate by a non-conductive adhesive, such as a polymer adhesive or low temperature seal glass, to seal the package once the microelectronic device has been mounted inside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.