Method of densifying porous substrates by chemical vapor infiltration of silicon carbide
US5738908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Jun 14, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/614
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A reaction gas containing methyltrichlorosilane (MTS) and hydrogen is injected into the infiltration chamber (30) in which the substrate is placed and where predetermined infiltration temperature and pressure conditions obtain. The gas entering the infiltration chamber is preheated (by plates 46) so as to bring it up to temperature before coming into contact with the substrate. The residual gas containing the remainder of the reaction gas together with gaseous reaction products is extracted from the chamber. Infiltration is performed at a temperature lying in the range 960.degree. C. to 1050.degree. C., and preferably in the range 1000.degree. C. to 1030.degree. C., under a total pressure of not more than 25 kPa, and preferably equal to 7 kPa to 12 kPa, and the concentration of silicon-containing species in the residual gas is lowered at the outlet from the infiltration chamber, e.g. by injecting an inert gas (via 70).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.