Radiation detector
US5739541A · kind A · utility
29Cited by
6References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 1, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Jul 1, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/26
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A method for detecting ionizing radiation by allowing the radiation to affect the surface of the floating gate of a MOSFET transistor through an air or gas space. For this purpose, an uncovered area is formed on the surface of the floating gate of the MOSFET transistor forming the detector. The MOSFET transistor is used so that a charge is formed on its floating gate, the charge changing as a result of the ionizing radiation the transistor is exposed to. The radiation dose is determined by the change which takes place in the charge on the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.