Light sensitive semiconductor device and method of operation
US5739561A · kind A · utility
6Cited by
2References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 30, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Apr 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to attract holes. A second voltage (31) is applied to the source region (14) and a drain region (16) to provide a current flow. As photons (23) from a light source are absorbed by semiconductor device (10), the source to drain current is decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.