Semiconductor device having improved surface evenness
US5739590A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1995 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Jun 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/923
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.