Thin film formation apparatus
US5741364A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1995 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Dec 11, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to relates to a hydrogenated amorphous silicon carbide used as the surface protecting layer of the photosensitive member for electrohotographic apparatus. In view of not allowing generation of blurring of photosensitive member under the high humidity atmosphere, the content (x) of carbon in the hydrogenated amorphous silicon carbide expressed by the general formula a-Si.sub.1-x C.sub.x :H is in the range of 0.4.ltoreq.x.ltoreq.0.8 and a ratio (TO/TA) of the peak (TO) amplitude appearing in the vicinity of 480 cm.sup.-1 and the peak (TA) amplitude appearing in the vicinity of 150 cm.sup.-1 observed by the laser Raman spectroscopy measurement using the excitation laser of Ar.sup.+ 488 nm is set to 2.0 or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.