Capacitor structure for semiconductor device and method of manufacturing the same
US5741734A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 1996 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Jan 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/138
Abstract
A capacitor structure of a semiconductor device which includes a semiconductor substrate, a first metal layer formed on the substrate, and a second metal layer formed on the first metal layer. The first metal layer has a nitridation-treated film along its outer surface. A tungsten film having a rugged surface is formed on the entire outer surfaces of the first and second metal layers. Because of the nitridation-treated film along the first layer, the tungsten film will be uniformly distributed along the first and second metals. A thin dielectric film is then formed on the surface of the tungsten, followed by a third metal layer formed on the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.