Electrically modifiable non-volatile memory with write checking
US5742548A · kind A · utility
6Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 17, 1994 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Nov 17, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/24
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In order to make it possible to ascertain that the programming cycles in an EEPROM type memory have been carried out efficiently, supplementary test cells are provided. A data writing operation is carried out in three successive cycles that consist in the programming of a test cell with a first logic value, a second cycle for the programming of the data elements and a third cycle for the programming of the test cell with a logic value that is complementary to the first one. The state of the test cell enables the detection of power interruptions during programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.