Ho:LuLF and Ho:Tm:LuLF laser materials
US5742632A · kind A · utility
9Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1995 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Sep 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1698
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser host material LuLF (LuLiF.sub.4) is doped with holmium (Ho) and thulium (Tm) to produce a new laser material that is capable of laser light production in the vicinity of 2 .mu.m. The material provides an advantage in efficiency over conventional Ho lasers because the LuLF host material allows for decreased threshold and upconversion over such hosts as YAG and YLF. The addition of Tm allows for pumping by commonly available GaAlAs laser diodes. For use with flashlamp pumping, erbium (Er) may be added as an additional dopant. For further upconversion reduction, the Tm can be eliminated and the Ho can be directly pumped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.