Sputtering apparatus
US5744016A · kind A · utility
24Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1997 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Jan 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3447
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering electrode 2 is attached to a vacuum chamber 1 to make it retain a Ti target 4 via a back plate 3. A substrate 9 is loaded on a substrate holder 8 provided at a lower portion of the vacuum chamber 1. A collimation plate 6 is provided between the substrate 9 and the Ti target 4 to pass through only the sputtered particles advancing in the vertical direction, and, at its outside, shield plates 5, 7 are provided. The shield plate 5 at the target side is shaped in a wave form and thus its surface area is increased so that nitrogen can be adsorbed as much as possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.