Dielectric film deposition method and apparatus

US5744403A · kind A · utility

Assignee

• LUCENT TECHNOLOGIES INC. · US

Inventors

• Edward Dein · Boca Raton, US
• Michael Gross · Salem, DE
• Richard Pudliner, Jr. · West Newton, US

Key dates

• Filing date: Jun 25, 1991
• Grant date: Apr 28, 1998
• Expiry date: Jun 25, 2011

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/402
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Dielectric layers comprising a silicon oxide and having essentially constant thickness across a wafer are produced by a plasma-deposition method; in preferred processing, a wafer is supported on a surface which extends significantly past the edge of the wafer. Resulting layers may be further processed by localized etching of windows or vias, uniform layer thickness being particularly beneficial, when timed etching is used, to ensure uniformity of etched openings.