Capacitive pressure sensor and method of fabricating same
US5744725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1997 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Jan 8, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0073
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitive pressure sensor and method of fabricating the sensor includes providing a layered structure including a second silicon layer (115), a second insulating layer (203, 205) in contact with the second silicon layer (115), a first silicon layer (123) in contact with the second insulating layer (203, 205), a first insulating layer (201) in contact with the first silicon layer (123), and a mask layer (221) in contact with the first insulating layer (201). A major exposed surface (220) of the second silicon layer (115) is provided by mechanically reducing a thickness (210) of the second silicon layer (115) to a predetermined thickness (116). Preferably this is done by grinding and then polishing the second silicon layer (115). In one embodiment a third insulating layer (211) is in contact with the second major surface (220) of the second silicon layer (115). A third silicon layer (101) having a fourth insulating layer (109) forming a perimeter structure (215) positioned above and surrounding a predefined area (114) of the third silicon layer (101). The perimeter structure (215) is bonded to the third insulating layer (211), wherein a chamber (113) is formed between the third in…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.