Photoelectric conversion semiconductor device
US5744850A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1996 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Oct 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.