Multi-layer film capacitor structures and method
US5745335A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1996 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Jun 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-layer film capacitor structure has a bottom electrode layer on a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and film dielectric overlying the intermediate pairs. The structure preferably has a mesa configuration, in which each electrode layer extends laterally beyond the periphery of the layers above it around the entire periphery of the device. Each electrode layer therefore has a top surface which is accessible at its projecting edge through a via, so that the electrodes can be accessed in any combination to permit any desired circuit connection. If desired the dielectric materials can have different frequency characteristics, allowing a single capacitor structure to be optimized for a filter. Either the bottom electrode or the top electrode or both can be grounded and capacitor connections can be made to intermediate layers, to reduce parasitic capacitance effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.