Semiconductor device having an improved anti-radioactivity and method of fabricating the same
US5747354A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | May 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides an n-channel MOS field effect transistor with an anti-radioactivity. The transistor includes leak guard boron diffusion layers, each of which has a junction surface to an isolation oxide film. The junction surface exists up to a deeper level than a predetermined depth corresponding to a junction surface of n-type source and drain diffusion layers and a p-type silicon substrate. Such leak guard boron diffusion layer is formed by ion-implantation of boron through a gate oxide film, after a formation of the gate oxide film. Such leak guard boron diffusion layers have a higher impurity concentration. The existence of the leak guard boron diffusion layers suppresses a leak to be generated by radiation damages of silicon oxide film such as the gate oxide film and the isolation oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.