Method of fabricating a surface emitting semiconductor laser
US5747366A · kind A · utility
25Cited by
10References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 26, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Dec 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.