Semiconductor device with increased distance between channel edges and a gate electrode
US5747828A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Mar 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/673
Abstract
The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger then a distance between a central portion of the channel region of the semiconductor island and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.