Patent · US Expired

Semiconductor memory device

US5747843A · kind A · utility

2Cited by
1References
9Claims
0Family size

Assignees

Inventors

Key dates

Filing dateJun 21, 1996
Grant dateMay 5, 1998
Priority date
Expiry dateJun 21, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An improved semiconductor memory device in which an electric circuit operates normally is provided. A block of memory cells of a dynamic random access memory is provided on a semiconductor substrate. A dummy storage node is provided near a corner portion of the memory cell block. A dummy cell plate is provided such that it covers the dummy storage node and is electrically insulated from a main cell plate of the DRAM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.