Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror
US5747862A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 1993 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Sep 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/06383
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.