MOS transistor switching circuit without body effect
US5748029A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A switching circuit utilizing MOS transistors without body effect having a first transistor inserted with source and drain terminals between two connection terminals, and a second and third transistors inserted in series by means of their respective source and drain terminals between the first transistor and a ground. The gate terminal of the second transistor is connected to the gate terminal of the first transistor to which is applied a command signal. Upon switching a signal is applied in phase opposition to the command signal to the gate terminal of the third transistor. The substrates of the first and the second transistors are connected to a connection node between the second and third transistors. The substrate of the third transistor is connected to ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.