Ferroelectric crystal having inverted domain structure
US5748361A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Jul 24, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/3558
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming ferroelectric domain regions in a ferroelectric crystal cut so that the polarization direction is in the plane of the crystal and is along the z direction is disclosed. The method includes forming a conductive ground electrode on the surface of the plane and having an edge perpendicular to the z direction or the polarization direction in the crystal plane; and electron beam bombarding the plane of the crystal in particular spots to deposit a charge such that the electric field created between the edge of the electrode and the spots is in a direction opposite to the crystal polarization direction and causing the inversion of the crystal polarization direction between the charge spot and the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.