Method of selecting a memory cell in a magnetic random access memory device
US5748519A · kind A · utility
83Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Dec 13, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Improved methods for selecting memory cells in magnetic random access memory (MRAM) are provided. Whenever a state in a memory cell is sensed, a MRAM requires to adjust an output of comparator to a zero voltage (auto-zeroing step) before the content of memory cell is detected. This invention sequentially accesses memory cells 29-30 once sense line 25 is selected and auto-zeroed. Accordingly, a higher speed operation is attained because the invention does not require an auto-zeroing step every sensing a memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.