Method for forming a thin film of a non-stoichiometric metal oxide
US5750188A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Aug 29, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/086
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for forming a thin film (220) of luminescent zinc oxide includes the steps of: (i) providing a mixture (170) of powdered zinc oxide and powdered graphite, (ii) providing a substrate (140) at a distance of about 9 millimeters from the mixture (170), (iii) disposing the mixture (170) and substrate (140) within an apparatus (100) that provides a confined environment having a partial pressure of oxygen of about 0.21 atmospheres, (iv) heating the mixture (170) to a temperature of about 850 degrees Celsius, and (v) establishing a temperature gradient between the substrate (140) and the mixture (170) of about 15 degrees, the temperature of the substrate (140) being less than the temperature of the mixture (170).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.