Process for forming a semiconductor device having a ferroelectric capacitor
US5750419A · kind A · utility
19Cited by
13References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1997 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Feb 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
One or more dielectric layers (32, 52) are formed over a ferroelectric capacitor (24) of a FENVM cell, where that the tension within the dielectric layers (32, 52) overlying the ferroelectric capacitor (24) is kept relatively low. By keeping the tension relatively low, the nonvolatile polarization of the FENVM cell is maintained during back end processing steps of a fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.