Field effect semiconductor device with a low-noise drift layer and a high-power drift layer
US5751027A · kind A · utility
6Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1995 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Nov 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect semiconductor device includes an undoped In.sub.0.2 Ga.sub.0.8 As first low-noise drift layer, an undoped In.sub.x Ga.sub.1-x As (x=0.2-0) second low-noise drift layer and an n-type GaAs high-power drift layer in this order. The high-power drift layer includes a first high-power drift layer doped with n-type carrier at high concentration and a second high-power drift layer doped with n-type carrier at low concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.