Field-effect semiconductor device having heterojunction
US5751029A · kind A · utility
3Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4735
Abstract
An undoped Al.sub.0.22 Ga.sub.0.78 As layer, an undoped In.sub.0.2 Ga.sub.0.8 As electron-drifting layer, and an undoped GaAs electron-supplying layer are formed in order on a GaAs substrate. An impurity-doped layer .delta.-doped with Si donor is formed in the GaAs electron-supplying layer. An n-Al.sub.0.22 Ga.sub.0.78 As layer and n.sup.+ -GaAs cap layers are formed in order on the GaAs electron-supplying layer. A source electrode and a drain electrode are formed on the n.sup.+ -GaAs cap layers and a gate electrode is formed on the n-Al.sub.0.22 Ga.sub.0.78 As layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.