Reliable metal leads in high speed LSI semiconductors using dummy leads
US5751056A · kind A · utility
12Cited by
16References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having metal leads 14 with improved reliability comprising metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and dummy leads 16 proximate the metal leads 14. Heat from the metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is improved reliability of metal leads for circuits using low-dielectric constant materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.