Ferroelectric capacitor with rhodium electrodes
US5751540A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Mar 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.