Manufacturing method of p-type semiconductor crystal
US5753039A · kind A · utility
2Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Nov 28, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object formed of a semiconductor is heated to and kept at such a temperature that a semiconductor crystal formed of a II-VI Group compound semiconductor mainly containing Zn and Se can be grown. A molecular beam including elements constituting the II-VI Group compound semiconductor mainly containing Zn and Se is irradiated onto the heated object, and a gas beam composed of a nitrogen molecule being in a ground electronic state and having a gas pressure of not less than 3.times.10.sup.-5 Torr, to form a p-type semiconductor crystal on the object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.