Device for creating a deposit of silicon oxide on a traveling solid substrate
US5753193A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 23, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | May 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.