Microelectronic device having dark mirror coating with vias therethrough
US5753375A · kind A · utility
12Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 5, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Jan 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device includes a substrate device and a dark mirror coating overlying one side of the substrate device. The dark mirror coating has a via therethrough to the substrate device. The dark mirror coating has a plurality of alternating layers of dielectrics and metals. Each metallic layer has an electrically nonconducting region adjacent to the vias, preferably formed by anodizing the metallic layers after deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.