Method for fabricating capacitor of semiconductor device
US5753549A · kind A · utility
5Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/377
Abstract
A method for fabricating a capacitor of a semiconductor device which is capable of reducing data errors caused due to the interaction between neighboring capacitors, which includes the steps of forming a first trench in a semiconductor substrate, filling the first trench with an insulation film, etching the semiconductor substrate at both sides of the first trench for forming second and third trenches, forming a first electrode at both sides of the second and third trenches, respectively, forming a dielectric film on the first electrode and the second and third trenches, and forming a second electrode on the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.