Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
US5753564A · kind A · utility
66Cited by
9References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a thin film of a silicon oxide on a silicon substrate is disclosed. An Si oxide film is formed by an ECR plasma. CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.