Article comprising a relatively temperature-insensitive Ta-oxide based capacitive element
US5754392A · kind A · utility
6Cited by
4References
6Claims
0Family size
Inventor
Key dates
| Filing date | Oct 22, 1996 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Oct 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/66
Abstract
Dielectric material of nominal composition (Al.sub.2 O.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x, with 0.03<x<0.15, unexpectedly can exhibit a relatively small temperature variation of the dielectric constant (e.g., <50 ppm/.degree.C. at 1 MHz and 20.degree. C.) and a relatively large value of the dielectric constant. The dielectric according to the invention advantageously is used in capacitive elements, e.g., in MOS capacitors in integrated circuits for personal communication devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.