Method and apparatus of forming thin films
US5755888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1995 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Aug 23, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.