Wet etching composition having excellent wetting property for semiconductors
US5755989A · kind A · utility
19Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1995 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Aug 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a wet etching composition for semiconductors which is characterized in that a surfactant comprising the two components of an alkylsulfonic acid and an .omega.-hydrofluoro-alkylcarboxylic acid is added to a buffered hydrofluoric acid composed of hydrogen fluoride, ammonium fluoride and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.