Masking methods during semiconductor device fabrication
US5756154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1996 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Jan 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of masking surfaces during fabrication of semiconductor devices is disclosed, which includes providing a substrate, and in a preferred embodiment a silicon substrate. The surface is hydrogen terminated (or hydrogenated) and a metal mask is positioned on the surface so as to define a growth area and an unmasked portion on the surface. Ozone is generated at the surface, at least in the unmasked area, by exposing the surface to a light having a wavelength approximately 185 nm (an oxygen absorbing peak), so as to grow an oxide film on the unmasked portion of the surface. The metal mask is removed and the oxide film then serves as a mask for further operations and can be easily removed in situ by heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.